Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE

GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 8C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with h00.1i direction is observed and is ...

GaN growth on porous silicon by MOVPE

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN 75 HVPE Growth on MOVPE-Grown Semipolar (112̄2) GaN

For the GaN material system, one reason for the breaking down of the efficiency is the socalled quantum confined Stark effect (QCSE). Since today’s LEDs are grown in the common [0001] (c-)direction, the internal polarization fields are perpendicular to the quantum wells. The cause of these internal fields are spontaneous and piezoelectric polarization. The reason for the latter is mechanical st...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

The large signal characteristics of 1 m long -gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed. The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively. High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz. Large signal gain and power density values of ...